Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

نویسندگان

چکیده

The possibility of fabrication 4.6 μm spectral range quantum-cascade laser heterostructures by molecular-beam epitaxy technique with non-selective overgrowth the metalorganic vapour-phase is shown. active region was formed on basis a heteropair In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As solid alloys. waveguide claddings are indium phosphide. results surface defects inspection and X-ray diffraction analysis allow to conclude that structural quality high estimated value root mean square roughness does not exceed 0.7 nm. Lasers four cleaved facets exhibit lasing at room temperature relatively low threshold current density order 1 kA/cm 2 . Keywords: superlattices, laser, epitaxy,

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Indirectly Pumped 3.7 THz InGaAs/InAlAs Quantum-Cascade Lasers Grown by Metal-Organic Vapor-Phase Epitaxy

Device-performances of 3.7 THz indirect-pumping quantumcascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum o...

متن کامل

Temperature Effect on THz Quantum Cascade Lasers

A simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of Resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. We found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency THz QCLs.In low frequenc...

متن کامل

Design Optimization for 4.1-THZ Quantum Cascade Lasers

We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at ‎‎4.1THz. This was based on a three-well active module with diagonal radiative transition. This ‎was performed by modifying the existing model structure, to reduce the parasitic anticrossings ‎‎(leakage currents) as well as the optical gain linewidth. While the gain FWHM was reduced by ‎more than 50% the gain pea...

متن کامل

Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy.

The transformation of InAs islands to quantum rings (QRs) by metalorganic vapor phase epitaxy is investigated. After covering the InAs islands with a thin GaAs partial capping layer and annealing under tertiarybutylarsine (TBAs) flow, ring-shaped nanostructures with a density of 10(7)-10(9) cm(-2) are obtained at 500-600 °C. The effects of the growth temperature, annealing process and thickness...

متن کامل

temperature effect on thz quantum cascade lasers

a simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. we found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency thz qcls.in low frequenc...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki

سال: 2022

ISSN: ['1726-7471', '0320-0116']

DOI: https://doi.org/10.21883/tpl.2022.15.55285.19014